Efficiency of Chip-Level Versus External Power Combining

نویسندگان

  • Eric W. Bryerton
  • Manoja D. Weiss
  • Zoya Popović
چکیده

In this paper, we compare two X-band highefficiency switched-mode amplifiers designed around two commercially available packaged MESFET’s, one having a four times larger gate periphery than the other. The amplifiers using the larger and smaller devices are designed to operate in classes E and F, respectively. The smaller device gives 685-mW output power with 7.4-dB gain and 64% overall efficiency. The larger device gives 1.70-W output power with 5.3-dB gain and 57% overall efficiency. This gives an internal (or chip-level) power-combining efficiency for the larger device of 89% in terms of overall efficiency. This is compared to the combining efficiency of circuit and spatial power combining using high-efficiency amplifiers, with the goal of assessing which architecture is the most efficient in terms of total dissipated power (dc and RF).

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تاریخ انتشار 1999